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WaferHome can manufacture the high quality Silicon Carbide Wafer(SiC wafer)

Specification for Silicon Carbide Wafer(SiC wafer)

                       
Item Dimeter Polytype

Type/dopant

Orientaion

thickness Micropipe Density/ cm-2 Resistivity

Flat

Surface/Roughness Usable area FWHM

Prime grade SiC

50.8mm 76.5mm 100mm 6H Intrinsic

<0001> or special orientation

250um+/-20 330um+/- 20 customization ≤ 10

1 - 10 *E10ohm-cm/Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 90% <50 arcsec
50.8mm 76.5mm 100mm 6H N(Nitrogen )

<0001> or special orientation

250um+/-20 330um+/- 20 customization ≤ 10

0.001 - 0.1 Ohm-cm /Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 90% <50 arcsec
50.8mm 76.5mm 100mm 4H Intrinsic <100> or special orientation 250um+/-20 330um+/- 20 customization ≤ 10

1 - 10 *E10ohm-cm/Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 90% <50 arcsec
50.8mm 76.5mm 100mm 4H N(Nitrogen ) <100> or special orientation 250um+/-20 330um+/- 20 customization ≤ 10

0.001 - 0.1 Ohm-cm /Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 90% <50 arcsec
Test grade SIC 25.4mm 50.8mm 76.5mm 6H Intrinsic

<0001> or special orientation

250um+/-20 330um+/- 20 customization ≤ 20

1 - 10 *E10ohm-cm/Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 80% <50 arcsec
100mm 125mm 150mm 6H N(Nitrogen )

<0001> or special orientation

250um+/-20 330um+/- 20 customization ≤ 20

0.001 - 0.1 Ohm-cm /Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 80% <50 arcsec
200mm 4H Intrinsic <100> or special orientation 250um+/-20 330um+/- 20 customization ≤ 20

1 - 10 *E10ohm-cm/Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 80% <50 arcsec
300mm 4H N(Nitrogen ) <100> or special orientation 250um+/-20 330um+/- 20 customization ≤ 20

0.001 - 0.1 Ohm-cm /Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 80% <50 arcsec
Probation grade Sic 25.4mm 50.8mm 76.5mm 6H Intrinsic

<0001> or special orientation

250um+/-20 330um+/- 20 customization ≤ 30

1 - 10 *E10ohm-cm/Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 70% <50 arcsec
100mm 125mm 150mm 6H N(Nitrogen )

<0001> or special orientation

250um+/-20 330um+/- 20 customization ≤ 30

0.001 - 0.1 Ohm-cm /Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 70% <50 arcsec
200mm 4H Intrinsic <100> or special orientation 250um+/-20 330um+/- 20 customization ≤ 30

1 - 10 *E10ohm-cm/Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 70% <50 arcsec
300mm 4H N(Nitrogen ) <100> or special orientation 250um+/-20 330um+/- 20 customization ≤30

0.001 - 0.1 Ohm-cm /Customization

16mm 22.5mm 32.5mm polished/etched polished/polished 70% <50 arcsec
InP crystal wafer 50.8mm   Intrinsic <100><111> 350um+/-20     16mm polished/etched polished/polished    
76.2mm N(S) <100><111> 600+/-25 22.5mm polished/etched polished/polished    
100mm P(Fe) <100><111> 600+/-25 32.5mm polished/etched polished/polished    
150mm   P<Zn> <100><111>    
GaSb crystal wafer 50.8mm   N(Te) <100><111> 500+/-25     16mm polished/etched polished/polished    
76.2mm P(Fe) <100><111> 600+/-25 22.5mm polished/etched polished/polished    
100mm P(Zn) <100><111> 800+/-25 32.5mm polished/etched polished/polished    
InAs crystal wafer 50.8mm   N(Sn) <100><111> 500+/-25     16mm polished/etched polished/polished    
76.2mm N(S) <100><111> 600+/-25 22.5mm polished/etched polished/polished    
100mm Intrinsic <100><111> 800+/-25 32.5mm polished/etched polished/polished    
150mm P(Zn) <100><111> 800+/-25 32.5mm polished/etched polished/polished