(钆镓石榴石GGG) (钇铝石榴石YAG) 钒酸钇(YVO4) 钒酸钆(YVO4) 磷酸氧钛钾(KTP) 三硼酸锂(LBO) 偏硼酸钡(BBO) KTP(磷酸氧钛钾)激光晶体 Wafer

WaferHome can manufacture 晶体 Wafer

Specification for (钆镓石榴石GGG) (钇铝石榴石YAG) 钒酸钇(YVO4) 钒酸钆(YVO4) 磷酸氧钛钾(KTP) 三硼酸锂(LBO) 偏硼酸钡(BBO) KTP(磷酸氧钛钾)激光晶体 Wafer

                       
Item Dimeter Type/dopant Orientaion crystal struction wavefront distortion
Parallelism Reflectivity dopant element concentration

Flatness

Surface/Roughness Geometric parameter
GGG

25.4mm 50.8mm 76.5mm 100mm

Intrinsic

<100><110><111>

cubic ≤0.15入/25mm  10 arc sec   1.95 0.5~1.2(±0.1)atm% < λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
(Nd:GGG)

25.4mm 50.8mm 76.5mm 100mm

Nd(钕)

<100><110><111>

cubic ≤0.15入/25mm  10 arc sec   1.95 0.5~1.2(±0.1)atm% < λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
(Yb:GGG)

25.4mm 50.8mm 76.5mm 100mm

镱(Yb)

<100><110><111>

cubic ≤0.15入/25mm  10 arc sec   1.95 0.5~1.2(±0.1)atm% < λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
YAG
25.4mm 50.8mm 76.5mm 100mm Intrinsic <100><110><111> cubic ≤0.125入/25mm  10 arc sec   1.82

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
(Nd:YAG )
25.4mm 50.8mm 76.5mm 100mm Nd(钕) <100><110><111> cubic ≤0.125入/25mm 10 arc sec   1.82

0.5~1.2(±0.1)atm%

N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
(Er:YAG )
25.4mm 50.8mm 76.5mm 100mm Er <100><110><111> cubic ≤0.125入/25mm 10 arc sec   1.82

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
(Yb:YAG )
25.4mm 50.8mm 76.5mm 100mm 镱(Yb) <100><110><111> cubic ≤0.125入/25mm 10 arc sec   1.82

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

YVO4
25.4mm 50.8mm 76.5mm 100mm Intrinsic <100><110><111> cubic ≤0.25入/25mm  10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

(Nd:YVO4)
25.4mm 50.8mm 76.5mm 100mm Nd(钕) <100><110><111> Tetragonal ≤0.25入/25mm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

(Er:YVO4)
25.4mm 50.8mm 76.5mm 100mm Er <100><110><111> Tetragonal ≤0.25入/25mm  10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

(Yb:YVO4)
25.4mm 50.8mm 76.5mm 100mm 镱(Yb) <100><110><111> Tetragonal ≤0.25入/25mm  10 arc sec  2.5

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

磷酸钛氧钾(KTP)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Monoclinic > λ/8 @ 633 nm  10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

KDP(KH2 PO4)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Monoclinic > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

Lithium Triborate (LiB3O5 , LBO)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Tetragonal > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

Beta-Barium Borate (β-BaB2O4,BBO)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Tetragonal > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

BiB3O6 (BIBO)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Tetragonal > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

BiB3O6 (BIBO)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Tetragonal > λ/8 @ 633 nm  10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
钛宝石(Ti:sappire)
红宝石(Cr:sappire
25.4mm 50.8mm 76.5mm 100mm Ti/Cr C A M cut Tetragonal > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

Yb:KGd(WO4)
25.4mm 50.8mm 76.5mm 100mm 镱(Yb) X Y Z cut Tetragonal > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

Nd:KGd(WO4)
25.4mm 50.8mm 76.5mm 100mm Nd(钕) X Y Z cut Tetragonal > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

三硼酸锂(LBO) 偏硼酸钡(BBO)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Tetragonal > λ/8 @ 633 nm  10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um

偏硼酸钡(BBO)
25.4mm 50.8mm 76.5mm 100mm   X Y Z cut Tetragonal > λ/8 @ 633 nm 10 arc sec  2.1

0.5~1.2(±0.1)atm%

< λ/10 @ 632.8 nm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um