silicon Epitaxial wafers

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Specification for silicon Epitaxial wafers Wafer

      Epitaxial layer subustrate layer
Grade Dimeter Geometric parameter

Type/dopant

Orientaion

thickness Resistivity

Flat

Type/dopant

Resistivity
Prime 25.4mm 50.8mm 76.5mm TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um P(Boron) N(Phos/As/Sb)

<100> <111> or special orientation

2 - 100um +/-6%

0.1- 200 Ohm-cm /Customization

N/A 16mm 22.5mm P(Boron) N(Phos/As/Sb) 0.0001 - 200 Ohm-cm /Customization
100mm 125mm 150mm TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um P(Boron) N(Phos/As/Sb) <100> <111> or special orientation 2 - 100um +/-6% 0.1- 200 Ohm-cm /Customization 32.5mm 42.5mm 57.5mm P(Boron) N(Phos/As/Sb) 0.0001 - 200 Ohm-cm /Customization
200mm TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um P(Boron) N(Phos/As/Sb) <100> <111> or special orientation 2 - 100um +/-6%

0.1- 200 Ohm-cm /Customization

nothch/flat P(Boron) N(Phos/As/Sb) 0.0001 - 200 Ohm-cm /Customization
300mm TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um P(Boron) N(Phos/As/Sb) <100> <111> or special orientation 2 - 100um +/-6% 0.1- 200 Ohm-cm /Customization notch/flat P(Boron) N(Phos/As/Sb) 0.0001 - 200 Ohm-cm /Customization