BBO(β相偏硼酸钡晶体,β-BaB2O4) 三硼酸锂(LiB3O5 or LBO) 碘化铯 NaI(Tl) 晶体 Wafer

WaferHome can manufacture 晶体 Wafer

Specification for BBO(β相偏硼酸钡晶体,β-BaB2O4) 三硼酸锂(LiB3O5 or LBO) 碘化铯 NaI(Tl) Wafer

                       
Item Dimeter(直径)or 尺寸(size)

Type/dopant(类型/掺杂)

Orientaion

crystal struction wavelength(nm)
相位匹配 有效非线性光学常 dopant element concentration

Flat

Surface/Roughness(表面粗糙度) Geometric parameter
LBO(LiB3O5 or LBO)

25.4mm 50.8mm

Intrinsic

<100><110><111>

tetragonal 532+532=266  47.7   1.32 0.5~1.2(±0.1)atm% N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
LBO(LiB3O5 or LBO)

25.4mm 50.8mm

Intrinsic

<100><110><111>

tetragonal 1064+266=213  51.1   1.26 0.5~1.2(±0.1)atm% N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
CLBO

25.4mm 50.8mm

Intrinsic

<100><110><111>

tetragonal 532+532=266  61.7   0.49 0.5~1.2(±0.1)atm% N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
CLBO

25.4mm 50.8mm

Intrinsic

<100><110><111>

tetragonal 1064+266=213  68.4 0.11  0.5~1.2(±0.1)atm% N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
CsI

25.4mm 50.8mm

Intrinsic

<100><110><111>

tetragonal 315     0.5~1.2(±0.1)atm% N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
NaI(Tl)
25.4mm 50.8mm Tl <100><110><111> tetragonal 415     1.82

0.5~1.2(±0.1)atm%

N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um